×


 x 

Shopping cart
Tsunenobu Kimoto - Fundamentals of Silicon Carbide Technology - 9781118313527 - V9781118313527
Stock image for illustration purposes only - book cover, edition or condition may vary.

Fundamentals of Silicon Carbide Technology

€ 155.60
FREE Delivery in Ireland
Description for Fundamentals of Silicon Carbide Technology Hardcover. A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. Num Pages: 552 pages. BIC Classification: TGM. Category: (P) Professional & Vocational. Dimension: 251 x 177 x 31. Weight in Grams: 994.

A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications

Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001.  The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls.  SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems.  In this wide-ranging ... Read more

  • A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques.
  • Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors.
  • A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources.
  • Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors.
  • Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development.

This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Show Less

Product Details

Format
Hardback
Publication date
2014
Publisher
John Wiley & Sons Inc United States
Number of pages
552
Condition
New
Number of Pages
400
Place of Publication
, United States
ISBN
9781118313527
SKU
V9781118313527
Shipping Time
Usually ships in 7 to 11 working days
Ref
99-15

About Tsunenobu Kimoto
Tsunenobu Kimoto, Department of Electronic Science and Engineering, Kyoto University, Japan. Professor Kimoto has been involved in SiC research for more than 20 years and his research activity in this field covers growth, optical and electrical characterization, device processing, device design and fabrication.  He has published more than 300 papers in international journals and has presented more than 50 ... Read more

Reviews for Fundamentals of Silicon Carbide Technology
“Students or working professionals interested in SiC technology will find this book worth reading.”  (IEEE Electrical Insulation Magazine, 1 November 2015) “If you have any interest in the now emerging SiC semiconductor devices, this book covers it all and in sufficient depth to answer questions that might arise from process engineers, device modelers, or power - circuits and ... Read more

Goodreads reviews for Fundamentals of Silicon Carbide Technology


Subscribe to our newsletter

News on special offers, signed editions & more!