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Nonlinear Transistor Model Parameter Extraction Techniques
Edited By Matthias R
€ 134.14
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Description for Nonlinear Transistor Model Parameter Extraction Techniques
hardcover. Achieve accurate and reliable parameter extraction using a broad range of techniques and models provided. Editor(s): Fager, Christian; Root, David E.; Rudolph, Matthias. Series: The Cambridge RF and Microwave Engineering Series. Num Pages: 366 pages, 273 b/w illus. 10 tables. BIC Classification: TJFD3; TJFN. Category: (U) Tertiary Education (US: College). Dimension: 252 x 179 x 22. Weight in Grams: 860.
Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to ... Read more
Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to ... Read more
Product Details
Format
Hardback
Publication date
2011
Publisher
Cambridge University Press United Kingdom
Number of pages
366
Condition
New
Series
The Cambridge RF and Microwave Engineering Series
Number of Pages
366
Place of Publication
Cambridge, United Kingdom
ISBN
9780521762106
SKU
V9780521762106
Shipping Time
Usually ships in 7 to 11 working days
Ref
99-12
About Edited By Matthias R
Matthias Rudolph is the Ulrich-L.-Rohde Professor for RF and Microwave Techniques at Brandenburg University of Technology, Cottbus, Germany. Prior to this, he worked at the Ferdinand-Braun-Institut, Leibniz Institut für Höchstfrequenztechnik (FBH), Berlin, where he was responsible for modeling of GaN HEMTs and GaAs HBTs and heading the low-noise components group. Christian Fager is an Associate Professor at Chalmers University of ... Read more
Reviews for Nonlinear Transistor Model Parameter Extraction Techniques
'Modeling is at the heart of any modern design process and improvements in transistor modeling have made a significant, but often unrecognized, contribution to the wireless revolution impacting our daily lives. The authors and contributors have collaborated across academic and company boundaries to bring together the latest techniques in a comprehensive and practical review of transistor modeling. This book is ... Read more